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2D Material Properties

Midwest Nano Infrastructure Corridor

BAs – Boron arsenide – Group III-V

Crystal Structure

BAs Crystal Structure
BAs Crystal Structure
a1 3.39 Å
a2 3.39 Å
Buckling Δ 0.00 Å
d1 1.96 Å

Bandstructure

BAs Brillouin Zone
BAs Brillouin Zone
BAs Band Plot (HSE)
BAs Band Plot (HSE)
PBEHSE
Valence Band Maximum -4.89 eV-5.21 eV
Conduction Band Minimum -4.13 eV-3.78 eV
Band Gap 0.76 eV1.43 eV