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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
BAs – Boron arsenide – Group III-V
Crystal Structure
BAs Crystal Structure
a
1
3.39 Å
a
2
3.39 Å
Buckling Δ
0.00 Å
d
1
1.96 Å
Bandstructure
BAs Brillouin Zone
BAs Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-4.89 eV
-5.21 eV
Conduction Band Minimum
-4.13 eV
-3.78 eV
Band Gap
0.76 eV
1.43 eV