BAs – Boron arsenide – Group III-V
Crystal Structure
a1 | 3.39 Å |
a2 | 3.39 Å |
Buckling Δ | 0.00 Å |
d1 | 1.96 Å |
Bandstructure
PBE | HSE | |
---|---|---|
Valence Band Maximum | -4.89 eV | -5.21 eV |
Conduction Band Minimum | -4.13 eV | -3.78 eV |
Band Gap | 0.76 eV | 1.43 eV |