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2D Material Properties

Midwest Nano Infrastructure Corridor

GaAs – Gallium arsenide – Group III-V

Crystal Structure

GaAs Crystal Structure
GaAs Crystal Structure
a1 4.04 Å
a2 4.04 Å
Buckling Δ 0.61 Å
d1 2.41 Å

Bandstructure

GaAs Brillouin Zone
GaAs Brillouin Zone
GaAs Band Plot (HSE)
GaAs Band Plot (HSE)
PBEHSE
Valence Band Maximum -5.27 eV-5.64 eV
Conduction Band Minimum -4.25 eV-3.76 eV
Band Gap 1.02 eV1.88 eV