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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
GaAs – Gallium arsenide – Group III-V
Crystal Structure
GaAs Crystal Structure
a
1
4.04 Å
a
2
4.04 Å
Buckling Δ
0.61 Å
d
1
2.41 Å
Bandstructure
GaAs Brillouin Zone
GaAs Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-5.27 eV
-5.64 eV
Conduction Band Minimum
-4.25 eV
-3.76 eV
Band Gap
1.02 eV
1.88 eV