GaAs – Gallium arsenide – Group III-V
Crystal Structure
a1 | 4.04 Å |
a2 | 4.04 Å |
Buckling Δ | 0.61 Å |
d1 | 2.41 Å |
Bandstructure
PBE | HSE | |
---|---|---|
Valence Band Maximum | -5.27 eV | -5.64 eV |
Conduction Band Minimum | -4.25 eV | -3.76 eV |
Band Gap | 1.02 eV | 1.88 eV |