GaN – Gallium nitride – Group III-V
Crystal Structure
| a1 | 3.25 Å |
| a2 | 3.25 Å |
| Buckling Δ | 0.00 Å |
| d1 | 1.88 Å |
Bandstructure
| PBE | HSE | |
|---|---|---|
| Valence Band Maximum | -5.24 eV | -6.03 eV |
| Conduction Band Minimum | -3.27 eV | -2.80 eV |
| Band Gap | 1.97 eV | 3.23 eV |