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2D Material Properties

Midwest Nano Infrastructure Corridor

GaP – Gallium phosphide – Group III-V

Crystal Structure

GaP Crystal Structure
GaP Crystal Structure
a1 3.89 Å
a2 3.89 Å
Buckling Δ 0.48 Å
d1 2.30 Å

Bandstructure

GaP Brillouin Zone
GaP Brillouin Zone
GaP Band Plot (HSE)
GaP Band Plot (HSE)
PBEHSE
Valence Band Maximum -5.46 eV-4.29 eV
Conduction Band Minimum -3.93 eV-1.80 eV
Band Gap 1.53 eV2.49 eV