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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
GeSn – Germanium tin – Group IV
Crystal Structure
GeSn Crystal Structure
a
1
4.42 Å
a
2
4.42 Å
Buckling Δ
0.75 Å
d
1
2.66 Å
Bandstructure
GeSn Brillouin Zone
GeSn Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-4.35 eV
-4.53 eV
Conduction Band Minimum
-4.27 eV
-4.07 eV
Band Gap
0.08 eV
0.46 eV