University of Minnesota
http://twin-cities.umn.edu/
612-625-5000
Main Menu

2D Material Properties

Midwest Nano Infrastructure Corridor

InAs – Indium arsenide – Group III-V

Crystal Structure

InAs Crystal Structure
InAs Crystal Structure
a1 4.35 Å
a2 4.35 Å
Buckling Δ 0.71 Å
d1 2.61 Å

Bandstructure

InAs Brillouin Zone
InAs Brillouin Zone
InAs Band Plot (HSE)
InAs Band Plot (HSE)
PBEHSE
Valence Band Maximum -5.02 eV-4.09 eV
Conduction Band Minimum -4.31 eV-3.05 eV
Band Gap 0.71 eV1.04 eV