InAs – Indium arsenide – Group III-V
Crystal Structure
| a1 | 4.35 Å |
| a2 | 4.35 Å |
| Buckling Δ | 0.71 Å |
| d1 | 2.61 Å |
Bandstructure
| PBE | HSE | |
|---|---|---|
| Valence Band Maximum | -5.02 eV | -4.09 eV |
| Conduction Band Minimum | -4.31 eV | -3.05 eV |
| Band Gap | 0.71 eV | 1.04 eV |