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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
InN – Indium nitride – Group III-V
Crystal Structure
InN Crystal Structure
a
1
3.58 Å
a
2
3.58 Å
Buckling Δ
0.00 Å
d
1
2.06 Å
Bandstructure
InN Brillouin Zone
InN Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-4.81 eV
-5.11 eV
Conduction Band Minimum
-4.23 eV
-3.76 eV
Band Gap
0.58 eV
1.35 eV