InN – Indium nitride – Group III-V
Crystal Structure
| a1 | 3.58 Å |
| a2 | 3.58 Å |
| Buckling Δ | 0.00 Å |
| d1 | 2.06 Å |
Bandstructure
| PBE | HSE | |
|---|---|---|
| Valence Band Maximum | -4.81 eV | -5.11 eV |
| Conduction Band Minimum | -4.23 eV | -3.76 eV |
| Band Gap | 0.58 eV | 1.35 eV |