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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
InP – Indium phosphide – Group III-V
Crystal Structure
InP Crystal Structure
a
1
4.27 Å
a
2
4.27 Å
Buckling Δ
0.56 Å
d
1
2.53 Å
Bandstructure
InP Brillouin Zone
InP Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-5.32 eV
-4.36 eV
Conduction Band Minimum
-4.21 eV
-3.20 eV
Band Gap
1.11 eV
1.16 eV