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2D Material Properties

Midwest Nano Infrastructure Corridor

P (Buckled) – Phosphorus – Group V

Experimental Properties Table

Crystal Structure

P (Buckled) Crystal Structure
P (Buckled) Crystal Structure
a1 3.28 Å
a2 3.28 Å
Buckling Δ 1.24 Å
d1 2.26 Å

Bandstructure

P (Buckled) Brillouin Zone
P (Buckled) Brillouin Zone
P (Buckled) Band Plot (HSE)
P (Buckled) Band Plot (HSE)
PBEHSE
Valence Band Maximum -6.09 eV-6.54 eV
Conduction Band Minimum -4.11 eV-3.81 eV
Band Gap 1.98 eV2.73 eV