SiC – Silicon carbide – Group IV
Crystal Structure
| a1 | 3.09 Å |
| a2 | 3.09 Å |
| Buckling Δ | 0.00 Å |
| d1 | 1.78 Å |
Bandstructure
| PBE | HSE | |
|---|---|---|
| Valence Band Maximum | -5.01 eV | -5.46 eV |
| Conduction Band Minimum | -2.46 eV | -2.19 eV |
| Band Gap | 2.55 eV | 3.27 eV |