SiGe – Silicon germanium – Group IV
Crystal Structure
a1 | 3.94 Å |
a2 | 3.94 Å |
Buckling Δ | 0.60 Å |
d1 | 2.35 Å |
Bandstructure
PBE | HSE | |
---|---|---|
Valence Band Maximum | -4.52 eV | -4.80 eV |
Conduction Band Minimum | -4.51 eV | -4.25 eV |
Band Gap | 0.01 eV | 0.55 eV |