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2D Material Properties
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2D Material Properties
Midwest Nano Infrastructure Corridor
SiGe – Silicon germanium – Group IV
Crystal Structure
SiGe Crystal Structure
a
1
3.94 Å
a
2
3.94 Å
Buckling Δ
0.60 Å
d
1
2.35 Å
Bandstructure
SiGe Brillouin Zone
SiGe Band Plot (HSE)
PBE
HSE
Valence Band Maximum
-4.52 eV
-4.80 eV
Conduction Band Minimum
-4.51 eV
-4.25 eV
Band Gap
0.01 eV
0.55 eV