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2D Material Properties

Midwest Nano Infrastructure Corridor

SiSn – Silicon tin – Group IV

Crystal Structure

SiSn Crystal Structure
SiSn Crystal Structure
a1 4.26 Å
a2 4.26 Å
Buckling Δ 0.69 Å
d1 2.55 Å

Bandstructure

SiSn Brillouin Zone
SiSn Brillouin Zone
SiSn Band Plot (HSE)
SiSn Band Plot (HSE)
PBEHSE
Valence Band Maximum -4.43 eV-4.65 eV
Conduction Band Minimum -4.21 eV-4.06 eV
Band Gap 0.22 eV0.59 eV