SiSn – Silicon tin – Group IV
Crystal Structure
| a1 | 4.26 Å |
| a2 | 4.26 Å |
| Buckling Δ | 0.69 Å |
| d1 | 2.55 Å |
Bandstructure
| PBE | HSE | |
|---|---|---|
| Valence Band Maximum | -4.43 eV | -4.65 eV |
| Conduction Band Minimum | -4.21 eV | -4.06 eV |
| Band Gap | 0.22 eV | 0.59 eV |